MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX A

A.7.1.11 Photothyristor. A thyristor that is intended to be responsive to radiant energy for controlling its operation

as a thyristor.

A.7.1.12 Phototransistor. A transistor that is intended to be responsive to radiant energy.

A.7.1.13 Photovoltaic diode. A photodiode that is intended to generate a terminal voltage in response to radiant

energy.

A.7.2 Photoemitting devices.

A.7.2.1 Avalanche luminescent diode. A light emitting diode that emits luminous energy when a controlled reverse

current in the breakdown region is applied.

A.7.2.2 Infrared emitting diode. A diode capable of emitting radiant energy in the infrared region of the spectrum

resulting from the recombination of electrons and holes.

A.7.2.3 Light emitting diode. A diode capable of emitting luminous energy resulting from the recombination of

electrons and holes.

A.7.2.4 Radiant efficiency. The ratio of the total radiant flux emitted to the total input power.

A.7.3 Optocouplers.

A.7.3.1 Photodarlington coupler. An opto-coupler in which the photo-sensitive element is a darlington connected

phototransistor.

A.7.3.2 Photodiode coupler. An opto-coupler in which the photosensitive element is a photodiode.

A.7.3.3 Photothyristor coupler. An opto-coupler in which the photosensitive element is a photothyristor.

A.7.3.4 Phototransistor coupler. An opto-coupler in which the photosensitive element is a phototransistor.

A.8 ELECTRICAL AND ENVIRONMENTAL STRESS SCREENING DEFINITIONS

A.8.1 Electrical and environmental stress screening.

Electrical stressing near maximum rating of semiconductor devices is performed to remove devices within a

given lot which are subject to early life failures due to improper processing.

Determine if wear-out mechanisms are present in a given lot which will shorten the time to failure (life tests).

A.8.2 Power burn-in. A generic term describing a screening test which operates the device by internally

dissipating sufficient power to significantly heat the device junction for a specified time.

A.8.2.1 Rectifying ac power burn-in. Power burn-in whereby junction heating is accomplished through the

alternate application every half cycle of forward current and reverse voltage.

A.8.2.2 Steady-state dc power burn-in. Power burn-in whereby junction heating is accomplished through the

application of steady-state forward current, reverse current, or forward power for diodes (including rectifiers), zeners,

and transistor respectively.

A.8.3 High temperature reverse bias. A generic term describing a screening test which applies a blocking voltage

and is normally performed at ambient temperature (TA) = +150�C through the external application of heat.