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MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P
APPENDIX B
ABBREVIATIONS AND SYMBOLS
B.1 SCOPE
B.1.1 Scope. This appendix covers the abbreviations and symbols for use with semiconductor devices. This
appendix is not a mandatory part of the specification. The information contained herein is intended for guidance only.
B.2 APPLICABLE DOCUMENTS. This section is not applicable to this appendix.
B.3 SEMICONDUCTOR ABBREVIATIONS AND SYMBOLS
B.3.1 Abbreviations.
AFC .......................................................... Automatic frequency control
AFT .......................................................... Automatic fine tuning
AQL .......................................................... Acceptable quality level
BIST ......................................................... Backward instability shock test
CAGE ....................................................... Commercial and Government Entity
CI ............................................................. Conformance inspection
DMOS ...................................................... Diffusion metal oxide semiconductor
DMS ......................................................... Diminishing manufacturing sources
DPA.......................................................... Destructive physical analysis
EE ............................................................ Element evaluation
EM............................................................ Electro-magnetic
ESD.......................................................... Electrostatic discharge
ESDS ....................................................... Electrostatic discharge sensitive
FA ............................................................ Failure analysis
FET .......................................................... Field-effect transistor
FIST ......................................................... Forward instability shock test
FIT............................................................ Failure in time
FMEA ....................................................... Failure mode and effects analysis
FRED ....................................................... Fast recovery epitaxial diode
GaAs ........................................................ Gallium arsenide
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