MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX B

B.4.2 FET symbols.

bis .............................................................. Small-signal, common-source, short-circuit, input susceptance

bos ............................................................. Small-signal, common-source, short-circuit, output susceptance

bfs .............................................................. Small-signal, common-source, short-circuit, forward transfer

susceptance

brs .............................................................. Small-signal, common-source, short-circuit, reverse transfer

susceptance

Cds............................................................. Small-signal drain to source capacitance

Cdu ............................................................ Small-signal drain to substrate capacitance

Ciss ............................................................ Small-signal, common-source, short-circuit, input capacitance

Coss ........................................................... Small-signal, common-source, short-circuit, output capacitance

Crss............................................................ Small-signal, common-source, short-circuit, reverse transfer

capacitance

D, d ............................................................ Drain terminal

EAR............................................................ Repetitive avalanche energy capability

EAS ............................................................ Single pulse avalanche energy capability

G, g ............................................................ Gate terminal

gfs .............................................................. Small-signal, common-source, short-circuit, forward transfer

conductance

gis .............................................................. Small-signal, common-source, short-circuit, input conductance

gos ............................................................. Small-signal, common-source, short-circuit, output conductance

Gpg ............................................................ Small-signal, common-gate insertion power gain

Gps ............................................................ Small-signal, common-source insertion power gain

grs .............................................................. Small-signal, common-source, short-circuit, reverse transfer

conductance

Gtg ............................................................. Small-signal, common-gate, transducer power gain

Gts ............................................................. Small-signal, common-source transducer power gain