MIL-PRF-19500P
APPENDIX D
D.3.9 Process control. The manufacturer shall assure that all manufacturing operations are carried out to insure
continued process capability. Operations shall be controlled as to the manner of production, requirements for
monitoring and control, and output product characteristics. Where necessary, due to the complexity or sensitivity of
operation parameters, the process shall consider working environment, workmanship criteria, equipment set-up, and
the need for special operator certification or continuous monitoring of critical parameters.
D 3.9.1 Statistical process control (SPC). Where SPC is used to control a process, the control shall be established
in accordance with EIA-557. If a sample exhibits an out-of-control condition, the product represented by the sample
shall be subjected to evaluation and disposition. The evaluation process, results, and disposition shall be
documented and traceable.
D 3.9.2 Environmental controls. The relative humidity, temperature, and particle count for each applicable critical
process step (e.g., wafer fabrication, assembly) shall be specified, controlled, and recorded. The procedures and
techniques for measuring these environmental parameters and limits shall be documented. The procedures shall
contain corrective actions for out-of-tolerance environmental conditions. Unsealed parts shall be handled in such a
way as to minimize the introduction of foreign material into the cavity. In addition, spittle protection is required in
applicable critical areas. See test method 5010 of MIL-STD-750.
D 3.9.3 Chemical controls. The purity of chemicals, including water, shall be specified and controlled. The purity
of process water shall be measured and recorded in terms of resistivity at +25°C (resistivity cells and meters shall be
calibrated), total solids, organic impurities, and bacteria count.
D.3.9.4 Wafer lot process and inspection. All suppliers shall develop wafer lot acceptance procedures and criteria.
These procedures and criteria shall address probe testing and lot acceptance testing, element evaluation or
equivalent for each wafer, or wafer lot as applicable unless otherwise approved by the qualifying activity. The
methods and procedures, which are utilized within wafer production for the following functions, as a minimum, shall
be documented:
D.3.9.4.1 Process.
a.
Sample sizes.
b.
Wafer cleaning and handling operations.
c.
Junction and surface preparations.
d.
Alloying processes.
D.3.9.4.2 Inspection.
a.
Control of wafer thickness. (For JANS, deviation shall be within 20 percent of the approved design
nominal.)
b.
Metal deposition and thickness. (For JANS, maximum thickness deviation shall be within 25 percent for the
approved design nominal of > 35K Angstroms, and within 30 percent for ≤ 35K Angstroms. For JANS, the
minimum front metallization thickness shall be 8,000 Å.)
c.
Glassivation and passivation thickness. (For JANS, deviation shall be within 30 percent of the approved
design nominal. For overlay structures or expanded metallization see H.3.7 for the minimum thickness that
is required.)
d.
Gold backing thickness, when applicable. (For JANS, deviation shall be within 30 percent of the approved
design nominal.)
e.
SEM, see E.3.1.2.1 (for JANS).
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