MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX D

d. Frontside and backside metal prior to sintering with the following stipulations.

(1) Visual examination of the front side of the wafer shall not reveal any residue or "ghost" footprint of the

previous metallization. It shall essentially be impossible to differentiate a reworked stripped

metallization wafer from a wafer that has never been metalized.

(2) Rework on front side metal is only permitted on junction devices (zeners, diodes, rectifiers, bipolar

transistors, SCR's, JFET's) or Schottkys. MOSFETs are not permitted.

(3) It is not permitted on any device for which the metal is patterned by an evaporation or sputtering metal

mask rather than using photoresist and etching.

(4) It is permitted on backside metal for all types provided suitable masking or protection is used for the

front side metal, unless the rework is purposely being done to rework both the front and the back metals

that are of identical construction.

e. Additional or re-diffusion provided a photolithography step has not occurred between diffusions.

For JANS, strip and redeposition of any oxide, or passivation layer is not allowed.

D.3.13.2.2 Assembly rework. Devices shall not be reworked during assembly. Devices shall not be subjected to

temperatures or processes that will reflow the die attach material. Wire bonded devices shall not be subjected to

rebonding. Devices shall not be resealed under any circumstances.

D.3.13.2.3 Rework of assembled devices. No delidding or package opening shall be permitted except for disc

packages. Unless otherwise specified, rework of sealed packages is limited to recleaning, rebranding to correct

defective marking, and lead straightening, replating, or resolder dipping of the leads. Rebranding and resolder

dipping may be performed as needed and are not subject to the one rework limit. After any replating or resolder

dipping, all JANS shall pass as a 100-percent screen, the requirements of group A, subgroup 2 of the specification

sheet and the hermetic seal requirements of screen 14 of table E-IV herein. For JANS clear glass diodes only, the

parts shall pass the hermetic seal requirements with a sample size of 116 pieces with no failures. All JANTXV and

JANTX shall pass the requirements of group A, subgroup 2 of the specification sheet and the hermetic seal

requirements of screen 14 of table E-IV herein with a sample size of 116 pieces with no failures allowed. Solder dip

and plating rework shall be in accordance with appendix H.

D.3.13.2.3.1 Irradiation of assembled devices. Irradiation is allowed when part of the qualified flow. If any portion

of a lot requires re-irradiation, a new inspection lot shall be formed, identified, and CI performed as required.

D.3.13.3 Rejected lots. Lots with an unscreenable failure mode shall be rejected (see E.6.1.1).

D.3.14 Corrective and preventive action.

D.3.14.1 Corrective action. The system identifies the necessity for corrective action as a result of failure, defect

analysis, inappropriate performance of inspections/procedures, product trends, product returns, inappropriate records

and audits (both customer and internal). The corrective action system shall provide for the use of a standard format

for documenting corrective actions. This standard format shall provide evidence of: Documents created and /or

revised to correct the problem, training, and follow-up to verify implementation and effectiveness. Failure to initiate

corrective action may result in removal of products from the qualified product list. The corrective action system shall

identify when a failure analysis is to be employed (i.e., field use, user analysis, Government Industry Data Exchange

Program (GIDEP), competitive analysis).

D.3.14.2 Preventive action. Appropriate sources of information such as processes and work operations which

affect product quality, audit results, quality records, and customer complaints shall be used to detect, analyze, and

eliminate potential causes of non-conformities. The methodology for the initiation, implementation, and follow up of

preventive actions shall be documented by the manufacturer.