MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX E

E.3.1.2.2 JANS inspection lots. A JANS inspection lot shall consist of the total number of devices that the

manufacturer submits at one time and which conforms to the following criteria:

Small lots shall not exceed 1,000 pieces. Sampling inspection for large or small lots shall be in accordance

with table E-VIA, and E-VII.

All devices shall be of a single device type.

All devices shall be from a single wafer lot.

All devices shall be assembled on the same production line with the same technique from die attach

through final seal, within 21 working days, not to exceed 31 calendar days.

E.3.2 Structurally identical device types. Structurally identical device types are devices manufactured on the same

production line(s) within the same plant through final seal using the same fabrication processes within the same

generic package outlines and construction materials and differ only electrically. The packages can vary in size but

the overall construction shall use the same process. The number and size of wires, or size of pins, can vary to

handle the power rating but the assembly process shall be identical with identical materials used. The processes

used to attach pins to tubes, slugs to pins, wires to chips and pins, sealing technique, and die attach shall be

identical. For glass diodes, surface mounts and axial leads may be grouped together. Examples of such structurally

identical device types are as follows:

Rectifiers, signal diodes, or thyristors grouped into different voltage ratings. Standard recovery, fast

recovery, and ultra fast recovery rectifiers are not typically considered structural identical. Rectifiers and

diodes with identical design rules (same doping technique, passivation, and device structure) which differ

only in die size and package size are considered structurally identical. Initially, group B and C shall be

performed on each device construction. On subsequent lots, the die sizes/package styles, which receive

group B and C inspection, shall be rotated on every lot thus assuring that all die sizes/package styles

receive groups B and C inspection.

Transistor groupings. Transistors with the same die structures that vary only in die size and package size

are considered structurally identical if the following criteria are met.

Die shall have the same generic design rules and vary only in size. Channel stop, voltage enhancement,

and emitter ballasting techniques, epi-base, diffused base, expanded contacts, and metal interconnects

over oxide steps shall be the same. The process sequence in the diffusion and photolithographic areas

shall be the same. Transistors shall have similar peak frequency responses and V ratings that do not vary

more than three to one (e.g., 3 MHz to 9 MHz, 60 VDC to 180 VDC). Darlington transistors cannot be

grouped with standard transistors.

Power MOSFETs with the same voltage ratings. For qualification, power MOSFETs of the same voltage

types with identical design rules (field termination and cell density) and which differ only in die size are

considered structural identical. Group C conformance inspection for MOSFET's does not involve any die

related tests, therefore, group C coverage is based only on case outline. Group C for non-RHA product

shall not be used to cover RHA product and vice-versa, unless same design is used for both.