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MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX E

Zener diodes, reference diodes, and transient voltage suppressors; grouped into different zener voltage

ratings with identical design rules (same passivation and device structure) which differ only in starting

silicon, crystal orientation, epitaxial resistivity, or die size or package type shall be considered a family. For

purposes of conformance inspection, structurally identical device groupings do not appIy for Group B JANS

device types but they may be used for qualification purposes. For qualification, for each JAN, JANTX, and

JANTXV, group B shall be performed on the highest and lowest zener voltages in the structurally identical

group. On subsequent lots, of JAN, JANTX, and JANTXV levels, the die sizes/package styles which

receive group B inspection shall be representative of all the structurally identical family devices contained

within the inspection lot, rotated on every lot assuring that all die/package styles receive group B inspection

periodically.

E.3.3 Disposal of samples. Devices subjected to destructive tests or which fail any test shall not be shipped.

Sample devices from lots which have passed CI and which have been subjected to mechanical or environmental

tests specified in groups B and C inspection and not classified as destructive, may be shipped provided each of the

devices subsequently passes group A, subgroup 2 inspection.

E.3.4 Destructive tests. Unless otherwise demonstrated, the following MIL-STD-750 tests are classified as

destructive:

Method number

Test

1017

Neutron irradiation.

1018

Internal gas analysis.

1019

Steady-state total dose irradiation procedure.

1020

Electrostatic discharge sensitivity (ESDS) classification.

1021

Moisture resistance.

1036, 1037

Intermittent operation life.

1041

Salt atmosphere corrosion.

1042 (condition D)

Burn-in and life test for power MOSFETs or insulated gate bipolar

transistors (IGBT).

1046

Salt spray (corrosion).

1056

Thermal shock (liquid to liquid).

1057

Resistance to glass cracking.

1080

Single-event burn-out and single-event gate rupture

2017

Die attach integrity.

2031

Soldering heat.

2036

Terminal strength.

2037

Bond strength (destructive bond pull test).

2075

Decap internal visual design verification.

2077

Scanning electron microscope (SEM) inspection of metallization.

2101

Destructive physical analysis (DPA) procedures for diodes.

2102

Destructive physical analysis (DPA) procedures for transistors.

3478

Power transistor electrical dose rate.

All other mechanical or environmental tests (other than those listed in E.3.5) shall be considered destructive initially,

but may subsequently be considered nondestructive upon accumulation of sufficient evidence to indicate that the test

is nondestructive. The accumulation of data from five repetitions of the specified test on the same sample of product,

without significant evidence of cumulative degradation in any device in the sample, is considered sufficient evidence

that the test is nondestructive for the device of that manufacturer. Any test specified as a 100-percent screen shall be

considered nondestructive for the stress level and duration or number of cycles applied as a screen.