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MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX E

E.3.5 Nondestructive tests. Unless otherwise demonstrated, the following MIL-STD-750 tests are classified as

nondestructive:

Test

Method number

1001

Barometric pressure (reduced).

1022

Resistance to solvents.

1026, 1027

Steady-state operation life.

1031, 1032

High temperature life (non-operating).

1038, 1039, 1040

Burn-in screen.

1042 (conditions A, B, and C)

Burn-in and life test for power MOSFETs or insulated gate bipolar

transistors (IGBT).

1048

Blocking life.

1051 (100 cycles or less)

Temperature cycling (air to air).

1071

Hermetic seal.

1081

Dielectric withstanding voltage

2006

Constant acceleration.

2016

Shock.

2026

Solderability. (if the original lead finish is unchanged and if the

maximum allowable number of reworks is not exceeded).

2052

Particle impact noise detection (PIND) test.

2056

Vibration, variable frequency.

2066

Physical dimensions.

2069, 2070, 2072, 2073, 2074

Internal visual (pre-cap).

2071

Visual and mechanical examination.

2076

Radiographic.

2081

Forward instability shock (FIST).

2082

Backward instability, vibration (BIST).

3051, 3052, 3053, 3474

Safe operating area (SOA) (condition A for test method 3053).

(with limited supply voltage)

3101

Thermal impedance (response) testing of diodes.

3103

Thermal impedance measurements for insulated gate bipolar transistors

(IGBT) (delta gate-emitter on voltage method).

3104

Thermal impedance measurements of GaAs MOSFET (constant current

forward-biased gate voltage method).

3131

Thermal impedance measurements for bipolar transistors (delta base-

emitter voltage method).

3161

Thermal impedance measurements for vertical power MOSFET's (delta

source-drain voltage method).

3181

Thermal resistance for thyristors.

4066

Surge current.

4081

Thermal resistance of lead mounted diodes (forward voltage, switching

method).

When the junction temperature exceeds the device maximum rated junction temperature for any operation or test

(including electrical stress test), these tests shall be considered destructive except under transient surge or

nonrepetitive fault conditions or approved accelerated screening when it may be desirable to allow the junction

temperature to exceed the rated junction temperature. The feasibility shall be determined on a part by part basis and,

in the case where it is allowed adequate sample testing, shall be performed to provide the proper reliability

safeguards.