MIL-PRF-19500-114 Semiconductor Device, Diode, Silicon, Voltage Regulator, 1N2804B Through 1N2811B, 1N2813B, 1N2814B, 1N2816B, 1N2818B Through 1N2820B, 1N2822B Through 1N2827B, 1N2829B, 1N2831B Through 1N2838B, 1N2840B Through 1N2846B, And Rb Types, 1N4557B Through 1N4562B, And Rb Types, Jan, Jantx, Jantxv, And JansThe specification covers the performance requirements for 50 watt silicon voltage regulator diodes. Forty-two devices, each with standard \(B types\) and reverse \(RB types\) polarity are addressed by this specification. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/114H

3.4.3 RB types. Reversed polarity (cathode to case) units shall be marked with an "R" preceding the "B" in the

type designation.

3.5 Marking. Marking shall be in accordance with MIL�PRF�19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4, and tables I, II, and III).

4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL�PRF�19500, and as

specified herein. Lot accumulation period shall be 6 months in lieu of 6 weeks.

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL�PRF�19500.

4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E�IV of

MIL�PRF�19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen

Measurement

(see table E�IV of

JANS level

JANTX and JANTXV levels

IR1 and VZ (for devices with VZ(nom) ≥ 10 V dc;

Not applicable

see column 1 of table III herein)

IR1 and VZ; ĆIR1 = 100 percent of initial value

IR1 and VZ

or 2 �A dc, whichever is greater;

ĆVZ = �1 percent of initial value (for devices

with VZ(nom) ≥ 10 V dc; see column 1 of

See 4.3.1

Subgroup 2 (except forward voltage test) and

Subgroup 2 (except forward voltage test) of

subgroup 3 of table I herein; ĆIR1 = 100 percent

table I herein; ĆIR1 = 100 percent of initial

value or 2 �A dc, whichever is greater, ĆVZ

of initial value or 2 �A dc, whichever is greater,

ĆVZ = �1 percent of initial value

= �1 percent of initial value

4.3.1 Power burn-in conditions. The power burn-in conditions shall be as follows: IZ (column 4 of table III herein)

at TJ = 150�C minimum and TC = 30�C.