MIL-PRF-19500-114 Semiconductor Device, Diode, Silicon, Voltage Regulator, 1N2804B Through 1N2811B, 1N2813B, 1N2814B, 1N2816B, 1N2818B Through 1N2820B, 1N2822B Through 1N2827B, 1N2829B, 1N2831B Through 1N2838B, 1N2840B Through 1N2846B, And Rb Types, 1N4557B Through 1N4562B, And Rb Types, Jan, Jantx, Jantxv, And JansThe specification covers the performance requirements for 50 watt silicon voltage regulator diodes. Forty-two devices, each with standard \(B types\) and reverse \(RB types\) polarity are addressed by this specification. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/114H

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E�VII of MIL�PRF�19500 and as follows. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.

Subgroup

Method

Condition

Not applicable.

1027

IZ = column 4 of table III herein. Adjust TA, mounting, or both to to achieve

TC = 150�C �5�C.

1037

6,000 cycles. See paragraph 4.5.8 (separate samples may be used).

αVZ JAN, JANTX, and JANTXV levels only, column 12 (αVZ) of table III herein.

4071

IZ = column 4 of table III herein; T1 = 30 �3�C, T2 = T1 +100�C each sublot.

n = 22, c = 0

Voltage regulation (see 4.5.2), each sublot, column 8 (VZ(reg)) of table III herein.

n = 22, c = 0

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Surge current IZSM. The currents specified in column 9 (IZSM) of table III herein shall be applied in the

reverse direction and shall be superimposed on the current of IZ (column 4 of table III herein) a total of five surges at

1 minute intervals. Each individual surge shall be a one-half square wave pulse of 1/120 second duration or a one-

half sine wave with the same effective (rms) current. During this test, the TC of the diode shall be equal to 30 �3�C.

4.5.2 Voltage regulation VZ(reg). A current at 10 percent of IZ (column 7 (IZM) of table III herein) shall be

maintained until thermal equilibrium is obtained and the VZ shall be noted. The current shall then be increased to a

level of 50 percent of IZ (column 7 (IZM) of table III herein) and maintained at this level until thermal equilibrium is

obtained, at which time the voltage change shall not exceed column 8 (VZ(reg)) of table III herein. During this test,

the TC of the diode shall be equal to 30 �3�C.

4.5.3 Regulator voltage. The test current IZ (column 4 of table III herein) shall be applied until thermal equilibrium

is obtained. During this test, the TC of the diode shall be equal to 30 �3�C.

4.5.4 Temperature coefficient of regulator voltage (αVZ). The device shall be temperature stabilized with current

applied prior to reading regulator voltage at the specified case temperatures.

4.5.5 Inspection condition. Unless otherwise specified herein, all inspections shall be made at TC of 30 �3�C.

4.5.6 Test ratings. Test ratings shall be as shown in table III herein. Type numbers with the suffix "RB" shall have

identical requirements as shown in table III herein for the corresponding B type except the polarity shall be as

specified in 3.4.1 herein.

4.5.7 Reverse current. The specified reverse voltage shall be applied between the case and pins 1 and 2

separately and the reverse current measured at each of pins 1 and 2.