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MIL-PRF-19500-114 Semiconductor Device, Diode, Silicon, Voltage Regulator, 1N2804B Through 1N2811B, 1N2813B, 1N2814B, 1N2816B, 1N2818B Through 1N2820B, 1N2822B Through 1N2827B, 1N2829B, 1N2831B Through 1N2838B, 1N2840B Through 1N2846B, And Rb Types, 1N4557B Through 1N4562B, And Rb Types, Jan, Jantx, Jantxv, And JansThe specification covers the performance requirements for 50 watt silicon voltage regulator diodes. Forty-two devices, each with standard \(B types\) and reverse \(RB types\) polarity are addressed by this specification. Four levels of product assurance are provided for each device type as specified in MIL–PRF–19500.

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MIL�PRF�19500/114H
TABLE I. Group A inspection.
Symbol
Limits 2/
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
Inspection
Subgroup 2
V dc
Forward voltage
4011
1.5
IF = 10 A dc
VF
�A dc
Reverse current
4016
Col 11
VR = column 10 of table III;
IR1
DC method (see 4.5.7)
V dc
Regulator voltage
4022
Col 2
Col 3
IZ = column 4 of table III herein 3/
VZ
Subgroup 3
TA = 150�C
High temperature
operation:
�A dc
Reverse current
4016
Col 13
VR = column 10 of table III herein;
IR2
DC method
Subgroup 4
ohms
Small-signal breakdown
4051
Z
Col 5
IZ = column 4 of table III herein; 3/
impedance
Isig = 10 percent of IZ
ohms
Knee impedance
4051
Col 6
IZK = 5 mA dc;
ZK
Isig = 10 percent of IZ
Subgroup 5
Not applicable
Subgroup 6
Surge current (see 4.5.1)
4066
JANS level only
IZSM = column 9 of table III herein
End point electrical
See table I, subgroup 2 herein
measurements
Subgroup 7
V dc
Voltage regulation
JANS level only n = 22, c = 0
Col 8
VZ(reg)
(see 4.5.2)
%/�C
αVZ
4071
Col 12
Temperature coefficient of
IZ = column 4 of table III herein;
regulator voltage (see 4.5.4)
T1 = 30 �3�C, T2 = T1 +100�C
1/
For JANS, all devices required by the specified sampling plan shall be subjected to subgroups 2, 3, and 4
combined.
Column references are for table III herein.
2/
During this test, the TC of the diode shall be equal to 30 �3�C.
3/
8



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