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MIL-PRF-19500-114 Semiconductor Device, Diode, Silicon, Voltage Regulator, 1N2804B Through 1N2811B, 1N2813B, 1N2814B, 1N2816B, 1N2818B Through 1N2820B, 1N2822B Through 1N2827B, 1N2829B, 1N2831B Through 1N2838B, 1N2840B Through 1N2846B, And Rb Types, 1N4557B Through 1N4562B, And Rb Types, Jan, Jantx, Jantxv, And JansThe specification covers the performance requirements for 50 watt silicon voltage regulator diodes. Forty-two devices, each with standard \(B types\) and reverse \(RB types\) polarity are addressed by this specification. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/114H

TABLE I. Group A inspection.

MIL�STD�750

Symbol

Limits 2/

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

Inspection

Subgroup 2

V dc

Forward voltage

4011

1.5

IF = 10 A dc

�A dc

Reverse current

4016

Col 11

VR = column 10 of table III;

IR1

DC method (see 4.5.7)

V dc

Regulator voltage

4022

Col 2

Col 3

IZ = column 4 of table III herein 3/

Subgroup 3

TA = 150�C

High temperature

operation:

�A dc

Reverse current

4016

Col 13

VR = column 10 of table III herein;

IR2

DC method

Subgroup 4

ohms

Small-signal breakdown

4051

Col 5

IZ = column 4 of table III herein; 3/

impedance

Isig = 10 percent of IZ

ohms

Knee impedance

4051

Col 6

IZK = 5 mA dc;

Isig = 10 percent of IZ

Subgroup 5

Not applicable

Subgroup 6

Surge current (see 4.5.1)

4066

JANS level only

IZSM = column 9 of table III herein

End point electrical

See table I, subgroup 2 herein

measurements

Subgroup 7

V dc

Voltage regulation

JANS level only n = 22, c = 0

Col 8

VZ(reg)

(see 4.5.2)

%/�C

αVZ

4071

Col 12

Temperature coefficient of

IZ = column 4 of table III herein;

regulator voltage (see 4.5.4)

T1 = 30 �3�C, T2 = T1 +100�C

For JANS, all devices required by the specified sampling plan shall be subjected to subgroups 2, 3, and 4

combined.

Column references are for table III herein.

During this test, the TC of the diode shall be equal to 30 �3�C.