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MIL-PRF-19500-144 Semiconductor Device, Diode, Silicon, Switching, Types 1N4454-1, 1N4454Ur-1, 1N4454Ub, 1N4454Ubca, 1N4454Ubcc, 1N4454Ubd, 1N3064, 1N4532, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/144R
* TABLE I. Group A inspection.
Limit
Inspection 1/ 2/ 3/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
ZθJX
Thermal impedance
3101
See 4.3.3
IF = 10 mA dc (pulsed, see 4.5.1)
VF1
Forward voltage
4011
.8
V dc
IR = 5 µA dc
VBR1
Breakdown voltage
4021
50
V dc
DC method, VR = 50 V dc
IR1
Reverse current
4016
100
nAdc
Subgroup 3
TA = +150°C
High temperature operation:
µA dc
DC method, VR = 50 V dc
IR2
Reverse current
4016
100
IF = 10 mA dc (pulsed, see 4.5.1)
VF2
Forward voltage
4011
.7
V dc
TA = -55°C
Low temperature operation:
TA = -55°C IR = 10 µA dc
VBR2
Breakdown voltage
4021
75
V dc
*
Subgroup 4
VR = 0 V dc, f = 1 MHz,
Capacitance
4001
C
2.0
pF
Vsig = 50 mVp-p maximum
trr
Reverse recovery time
4031
4
ns
Condition A, IF = IRM = 10 mA dc
See method 4023 of MIL-STD-750,
Scope display evaluation
4023
figures 4023-3, -7, -9, -10 only
Subgroup 5
Not applicable
See footnotes at end of table.
11



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