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MIL-PRF-19500-162 Semiconductor Devices, Diode, Silicon, Power Rectifier, Types 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R, Jan And JantxThis specification covers the performance requirements for silicon, power rectifier diodes. Two levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/162E
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points)
shall be IR1 and VF in accordance with table I, subgroup 2 herein.
4.4.4.1 Group E inspection, appendix E, table E-IX of MIL-PRF-19500.
Subgroup
Method
Condition
E5
1001
Hg = rated Hg, t = 60s, (see 1.4), VR = rated VRWM.
4.5 Methods of inspection. Methods of inspection shall be specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
4.5.2 Inspection of conditions. Unless otherwise specified, all inspections shall be conducted at an ambient
temperature, TA = +25°C ±3°C.
4.5.3 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 3101
or 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test.
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