For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-225 Semiconductor Device, Transistor, Npn, Silicon, Types 2N1711, 2N1711S, 2N1890, And 2N1890S, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16


img
MIL-PRF-19500/225K
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
2071
n = 45 devices, c = 0
examination 3/
Solderability 3/
2026
n = 15 leads, c = 0
Resistance to solvents
1022
n = 15 devices, c = 0
3/ 4/
Temp cycling 3/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 5/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
Table I, subgroup 2
Bond strength 3/
2037
Precondition
TA = +250°C at t = 24 hours or
TA = +300°C at t = 2 hours
n = 11 wires, c = 0
Decap internal visual (design
2075
n = 4 devices, c = 0
verification)
Subgroup 2
*
°C/W
3131
See 4.3.2
Thermal impedance 6/
ZθJX
Breakdown voltage, collector to
3011
Bias condition D; IC = 30 mA dc;
V(BR)CEO
emitter
pulsed (see 4.5.1).
2N1711, 2N1711S
30
V dc
2N1890, 2N1890S
60
V dc
Breakdown voltage, collector to
3011
Bias condition D; IC = 100 mA dc;
V(BR)CER
emitter
pulsed (see 4.5.1). RBE = 10 Ω.
2N1711, 2N1711S
50
V dc
2N1890, 2N1890S
80
V dc
Collector to base cutoff current
3036
Bias condition D
ICBO1
2N1711, 2N1711S
10
nA dc
VCB = 60 V dc
2N1890, 2N1890S
10
nA dc
VCB = 80 V dc
See footnotes at end of table.
7



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.