MIL-PRF-19500/225K
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 Continued.
Emitter to base cutoff current
3061
5.0
nA dc
Bias condition D; VEB = 5 V dc
IEBO1
Collector to base cutoff current
3036
Bias condition D
ICBO2
µA dc
100
2N1711, 2N1711S
VCB = 75 V dc
µA dc
100
2N1890, 2N1890S
VCB = 100 V dc
µA dc
Emitter to base cutoff current
3061
100
Bias condition D; VEB = 7 V dc
IEBO2
Collector-emitter saturation
3071
IC = 150 mA dc; IB = 15 mA dc;
VCE(sat)1
voltage
pulsed (see 4.5.1)
2N1711, 2N1711S
1.5
V dc
2N1890, 2N1890S
5.0
V dc
3071
V dc
Collector-emitter saturation
IC = 50 mA dc; IB = 5 mA dc;
VCE(sat)2
voltage
pulsed (see 4.5.1)
2N1890, 2N1890S
1.2
V dc
Base emitter saturation voltage
3066
1.3
V dc
VBE(sat)1
Test condition A, IC = 150 mA dc,
IB = 15 mA dc, pulsed (see 4.5.1).
Base emitter saturation voltage
3066
V dc
VBE(sat)2
Test condition A, IC = 50 mA dc,
IB = 5 mA dc, pulsed (see 4.5.1).
2N1890, 2N1890S
0.9
V dc
VCE = 10 V dc; IC = 10 µA dc
Forward-current transfer ratio
3076
20
hFE1
pulsed (see 4.5.1).
Forward-current transfer ratio
3076
100
300
VCE = 10 V dc; IC = 150 mA dc
hFE2
pulsed (see 4.5.1).
Forward-current transfer ratio
3076
hFE3
VCE = 10 V dc; IC = 500 mA dc
pulsed (see 4.5.1).
2N1711, 2N1711S
50
Subgroup 3
TA = +150°C
High temperature operation
Collector to base cutoff current
3036
Bias condition D;
ICBO3
µA dc
2N1711, 2N1711S
10
VCB = 60 V dc
µA dc
2N1890, 2N1890S
15
VCB = 80 V dc
TA = -55°C
Low temperature operation
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 10 mA dc,
35
hFE4
pulsed (see 4.5.1).
See footnotes at end of table.
8
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