MIL-PRF-19500-270 Semiconductor Device, Unitized, Dual-Transistor, Npn, Silicon, Types 2N2060 And 2N2060L, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for two electrically isolated, matched NPN, silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/270J

* TABLE II. Group E inspection (all quality levels) - for qualification and requalification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See subgroup 2 of table I and 4.5.9 herein.

Subgroup 2

45 devices

c=0

Intermittent operation life: VCB = 10 V dc, 6,000 cycles

Intermittent life

1037

See subgroup 2 of table I and 4.5.9 herein.

Electrical measurements

Subgroup 4

Sample size

Thermal impedance curves

Each supplier shall submit their qual-lot average and design

N/A

thermal impedance curves. In addition, optimal test

conditions and ZθJX limit shall be provided to the qualifying

activity in the qualification report.

Subgroup 5

Not applicable

Subgroup 6

3 devices

c=0

ESD

1020

Subgroup 8

45 devices

c=0

Condition A for devices ≥ 400 V,

Reverse stability

1033

Condition B for devices < 400 V.