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MIL-PRF-19500-270 Semiconductor Device, Unitized, Dual-Transistor, Npn, Silicon, Types 2N2060 And 2N2060L, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for two electrically isolated, matched NPN, silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/270J
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1.4 Primary electrical characteristics.
hFE1
hFE3
hFE4 (1)
| hfe|
VCE(sat)
VBE(sat)
hFE2
Limit
VCE = 5 V dc
VCE = 5 V dc VCE = 5 V dc VCE = 10 V dc IC = 50 mA dc
IC = 50 mA dc
VCE = 5 V dc
IC = 10 µA
IC = 100 µA
IC = 10 mA
IC = 1 mA dc
IC = 50 mA dc
IB = 5 mA dc
IB = 5 mA dc
dc
dc
dc
f = 20 MHz
V dc
V dc
3
50
40
30
25
Min
25
150
120
90
75
0.3
0.9
Max
(1) Pulsed (see 4.5.1).
1.5 Primary electrical matching characteristics of each individual section.
|Ć( VBE1 - VBE2) Ć TA |1
|Ć(VBE1 - VBE2) Ć TA |2
| VBE1 - VBE2|
hFE 2-1
(1)
hFE 2- 2
Limit
VCE = 5 V dc;
VCE = 5 V dc;
VCE = 5 V dc;
VCE = 5 V dc;
IC = 100 µA dc
IC = 100 µA dc
IC = 100 µA dc
IC = 100 µA dc
TA = +25°C and -55°C
TA = +125°C and +25°C
1/
mV dc
mV dc
mV
Min
0.9
Max
1.0
5
0.8
1.0
(1) The larger number will be placed in the denominator.
2



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