MIL-PRF-19500/270J
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type
enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.
4.4.4 Group E Inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500, appendix E and as specified in table II herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Testing of units. All specified electrical tests, including electrical measurements (end-points) and delta
requirement tests, shall be performed equally on both sections of the transistor types covered herein, except where
the electrical characteristic being evaluated applies to the transistor as a device entity.
4.5.3 Disposition of leads when testing characteristics of each section. During the measurement of the
characteristic of each section, the leads of the section not under test shall be open-circuited.
4.5.4 Forward-current-gain ratio. The value for the forward-current-gain ratio for each individual section of a dual
unit shall be measured using method 3076 of MIL-STD-750. The forward-current-gain ratio shall be calculated by
dividing one of the values by the other. If possible, this ratio shall be measured directly to improve accuracy.
4.5.5 Base-emitter-voltage differential. The base-emitter-voltage differential shall be determined by connecting
the emitters of the individual sections together, applying specified electrical test conditions to each individual section
in accordance with method 3066 of MIL-STD-750, test condition B, and measuring the absolute value of the voltage
between the bases of the individual sections of a dual unit.
4.5.6 Base-emitter-voltage differential change with temperature. The value of the base-emitter-voltage differential
shall be measured at the two specified temperatures in accordance with 4.5.5 except that the identities of the
individual sections shall be maintained. The absolute value of the algebraic difference between the values at the two
temperature extremes shall be calculated. A mathematical formula for this parameter is:
| (VBE1 - VBE2) T1 - (VBE1 - VBE2) T2 |
4.5.7 Noise figure test. Noise figure shall be measured using a model No. 2173C/2181 Quan Tech Laboratories
test set, or equivalent. Conditions shall be as specified in table I.
4.5.8 Noise figure (wideband) test. Wideband noise figure shall be measured using a model No. 512 Quan Tech
Laboratories test set, or equivalent. Conditions shall be as specified in table I.
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