MIL-PRF-19500/287G
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Unit
MIL-STD-750
Limits
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
2071
n = 45 devices, c = 0
inspection 3/
Solderability 3/ 4/
2026
n = 15 leads, c = 0
1022
n = 15 devices, c = 0
Resistance to solvents
3/ 4/ 5/
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles. n = 22
devices, c = 0
Hermetic seal 4/ 6/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 4/
Table I, subgroup 2
Precondition TA = +250°C at t = 24
Bond strength 3/ 4/
2037
hours or TA = +300°C at t = 2 hours
n = 11 wires, c = 0
2075
n = 4 devices, c = 0
Decap internal visual
(design verification) 4/
Subgroup 2
Bias condition D, IC = 100 μA dc
40
Breakdown to voltage,
V dc
3001
V(BR)CBO
collector to base
20
V dc
3011
Bias condition D, IC = 10 mA dc
Breakdown voltage,
V(BR)CEO
pulsed (see 4.5.1)
collector to emitter
Bias condition C, IC = 100 μA dc
Breakdown voltage,
40
V dc
3011
V(BR)CES
collector to emitter
Bias condition D, IE = 100 μA dc
3026
5
V dc
Breakdown voltage
V(BR)EBO
emitter to base
3041
Bias condition C, VCE = 20 V dc
Collector to emitter
300
nA dc
ICES1
VBE = 0
cutoff current
VCE = 0.4 V dc; IC = 30 mA dc;
35
120
3076
Forward-current
hFE1
pulsed (see 4.5.1)
transfer ratio
3076
VCE = 0.5 V dc; IC = 100 mA dc;
Forward-current
30
hFE2
pulsed (see 4.5.1)
transfer ratio
Forward-current
VCE = 1.0 V dc; IC = 300 mA dc;
15
3076
hFE3
pulsed (see 4.5.1)
transfer ratio
3071
IC = 30 mA dc; IB = 3.0 mA dc;
Collector to emitter
0.18
V dc
VCE(sat)1
pulsed (see 4.5.1)
voltage (saturated)
See footnotes at end of table.
7
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