MIL-PRF-19500-290 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types, 2N2904, 2N2904A, 2N2904Al, 2N2905, 2N2905A, And 2N2905Al, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/290P

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as

defined in 1.3. With approval of the qualifying activity and preparing activity, an alternate burn-in flow may be used

for JANTX and JANTXV quality levels. A justification demonstrating equivalence or adequacy is required. In

addition, the manufacturing site's burn-in data and performance history will be essential criteria for burn-in

modification approval.

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). The thermal impedance limit used in screen 3c of 4.3 and the subgroup 2 of table I herein shall comply

with the thermal impedance graph in figures 4 and 5 (less than or equal to the curve value at the same tH time) and

shall be less than the process determined statistical maximum limit as outlined in method 3131.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only (table

E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance

with 4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of

MIL-PRF-19500 and table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)

and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein. See 4.4.2.2 for JAN,

JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN,

JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and 4.5.3

herein.

4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500.

Subgroup Method

Condition

VCB = 10 V dc.

1037

VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure

1027

occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with table E-VIA

of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a

TJ = +225�C minimum.