MIL-PRF-19500-290 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types, 2N2904, 2N2904A, 2N2904Al, 2N2905, 2N2905A, And 2N2905Al, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/290P

4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E.

RθJA and RθJC only, as applicable (see 1.3).

3131

Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

4.4.4 Group D inspection. Quality conformance inspection for hardness assured JANS and JANTXV types shall

include the group D tests specified in table II. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the

applicable steps of 4.5.3.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except

the output capacitor shall be omitted.

4.5.3 Delta requirements. Delta requirements shall be as specified below:

Step

Inspection

MIL-STD-750

Symbol

Limit

Method

Conditions

Collector-base cutoff

3036

Bias condition D,

100 percent of initial value

ĆICB02 (1)

or �8 nA dc, whichever is

current

VCB = 50 V dc

greater.

(1) Devices which exceed the table I limits for this test shall not be accepted.