The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 14 December 2011.
MIL-PRF-19500/315G
14 September 2011
SUPERSEDING
MIL-PRF-19500/315F
30 June 1999
*
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. Type 2N2880, see figure 1 (TO-59), for type 2N3749, see figure 2 (TO-111).
* 1.3 Maximum ratings.
PT (1)
PT (2)
VCEO
VEBO
IC
IB
TSTG and TOP
VCBO
TA = 25C
TC = 100C
C
W
W
V dc
V dc
V dc
A dc
A dc
2
30
110
80
8
5
0.5
-65 to +200
(1) Derate linearly 11.4 mW/C for TA > 25C.
(2) Derate linearly 300 mW/C for TC > 100C, see figure 3.
*
1.4 Primary electrical characteristics at TC = 25C.
VCE(sat) (1)
VBE(sat) (1)
|hfe|
hFE2 (1)
hFE3 (1)
Cobo
VCB = 10 V dc
IC = 1 A dc
IC = 1 A dc
VCE = 10 V dc
VCE = 2 V dc
VCE = 5 V dc
Limits
RJC
IE = 0
IB = 100 mA dc
IB = 100 mA dc
IC = 1 A dc
IC = 1 A dc
IC = 5 A dc
100 kHz f 1 MHz
f = 10 MHz
C/W
V dc
pF
V dc
Min
15
40
3
1.2
0.25
150
Max
---
120
12
3.33
(1) Pulsed (see 4.5.1).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.daps.dla.mil .
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