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MIL-PRF-19500-337 Semiconductor Device, Silicon, Switching, Types 1N4153-1, 1N4153Ur-1, 1N4153Ub, 1N4153Ubca, 1N4153Ubcc, 1N4153Ubd, 1N4153Ubn, 1N4153Ubnd, 1N4534, And 1N4534Ub, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/337L
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
* 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup
Method
Conditions
0°C to + 100°C, 10 cycles.
C2
1056
-55°C to + 175°C, 45 cycles including screening.
C2
1051
*
C2
2036
Tension - test condition A; weight = 10 pounds, t = 15 s; lead fatigue = condition E
(not applicable to `UR' UB, and `UBN' suffix types).
L = .375 inch (9.53 mm), RθJL = 250°C/W maximum; RθJEC = 100°C/W; (see 4.3.2), 22
C5
4081
devices, c = 0.
1,000 hours minimum, V(pk) = rated VRWM; f = 50 - 60 Hz; IO = 200 mA dc minimum; adjust
C6
1026
TA or IO to obtain a minimum TJ of +150°C. (See 4.5.2.)
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750.
4.5.2 Free air power burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided
that each device under test still sees the full IO (minimum) and that the minimum applied voltage, where applicable, is
maintained throughout the burn-in period. Method 3100 of MIL-STD-750 shall be used to measure TJ.
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