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MIL-PRF-19500-337 Semiconductor Device, Silicon, Switching, Types 1N4153-1, 1N4153Ur-1, 1N4153Ub, 1N4153Ubca, 1N4153Ubcc, 1N4153Ubd, 1N4153Ubn, 1N4153Ubnd, 1N4534, And 1N4534Ub, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/337L
Temperature-Current Derating Curve
1N4153-1, 1N4153UR-1, 1N4534
TA (°C) (AMBIENT)
DC Operation
RθJA(PCB) = 325°C/W
NOTES:
1. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will intersect
the appropriate power for the desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 175°C) and current rating
specified. (See 1.3.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curves chosen at TJ ≤ 125°C, and 110°C to show current rating where most users want to limit TJ
in their application.
FIGURE 5. Temperature-current derating graph (all devices).
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