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MIL-PRF-19500-337 Semiconductor Device, Silicon, Switching, Types 1N4153-1, 1N4153Ur-1, 1N4153Ub, 1N4153Ubca, 1N4153Ubcc, 1N4153Ubd, 1N4153Ubn, 1N4153Ubnd, 1N4534, And 1N4534Ub, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/337L
* TABLE I. Group A inspection.
MIL-STD-750
Limit
Inspection 1/ 2/ 3/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
ZθJX
Thermal impedance
3101
See 4.3.2
IF = 100 µA dc (pulsed, see 4.5.1)
VF1
Forward voltage
4011
0.49
0.55
V dc
IF = 250 µA dc (pulsed, see 4.5.1)
VF2
Forward voltage
4011
0.53
0.59
V dc
IF = 1 mA dc (pulsed, see 4.5.1)
VF3
Forward voltage
4011
0.59
0.67
V dc
IF = 2 mA dc (pulsed, see 4.5.1)
VF4
Forward voltage
4011
0.62
0.70
V dc
IF = 10 mA dc (pulsed, see 4.5.1)
VF5
Forward voltage
4011
0.70
0.81
V dc
DC method; VR = 50 V dc
IR1
Reverse current
4016
50
nA dc
IR = 5 µA dc
VBR1
Breakdown voltage
4021
100
V dc
Subgroup 3
TA = +150°C
High temperature operation:
µA dc
DC method, VR = 50 V dc
IR2
Reverse current
4016
50
TA = -55°C
Low temperature operation:
IR = 5 µA dc
V(BR)2
Breakdown voltage
4021
75
V dc
Subgroup 4
VR = 0 V dc, f = 1 MHz,
Junction capacitance
4001
C
2.0
pF
Vsig = 50 mV (pk to pk), max
Condition A, IF = IRM = 10 mA dc
trr
Reverse recovery time
4031
4
ns
See method 4023 of MIL-STD-750,
Scope display evaluation
4023
figures 4023-3, 4023-7,4023 -9, 4023-10
only
Subgroup 5
Not applicable
See footnotes at end of table.
12



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