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MIL-PRF-19500-337 Semiconductor Device, Silicon, Switching, Types 1N4153-1, 1N4153Ur-1, 1N4153Ub, 1N4153Ubca, 1N4153Ubcc, 1N4153Ubd, 1N4153Ubn, 1N4153Ubnd, 1N4534, And 1N4534Ub, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/337L
Dimensions
Inches
Millimeters
Ltr
Min
Max
Min
Max
A
.0059
.0061
.150
.155
B
.0130
.0170
.330
. 432
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Element evaluation accomplished utilizing TO-5 package.
4. The physical characteristics of the die are:
Metallization:
Top (anode): Al.
Back (cathode): Au.
Al thickness: 25,000 Å minimum.
Gold thickness: 4,000 Å minimum.
Chip thickness: .010 inches (0.25 mm) ±.002 inches (0.05 mm).
FIGURE 4. Physical dimensions, JANHCA and JANKCA die.
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