MIL-PRF-19500-347 Semiconductor Device, Transistor, Npn, Silicon, Power Types: 2N3253, 2N3253S, 2N3444, 2N3444S, Jan, And JantxThis specification covers the detail requirements for NPN silicon power transistors. Two levels of product assurance is provided for the device type as specified in MIL-S-19500.

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MIL-PRF-19500/347B

4. VERIFICATION

* 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Either "S" suffix

devices or non-suffix devices may be used for qualification.

* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.3 Screening (JANTX level only). Screening shall be in accordance with table E-IV of MIL-PRF-19500

(table E-IV), and as specified herein. The following measurements shall be made in accordance with table I herein.

Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-

Measurement

IV) of

JANTX level

(1) 3c

Thermal impedance (see 4.3.2)

Not applicable

ICBO1 and hFE2

ĆICBO1 = 100 percent of initial value or .05 �A dc,

whichever is greater; ĆhFE2 = 15 percent of initial

value; subgroup 2 of table I herein.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:

TA = Room ambient as defined in the general requirements of MIL-STD-750, paragraph 4.5.

2N3444 = VCB = 40 V dc,

2N3253 = VCB = 32 V dc, PT = 1.0 W.

NOTE: No heat sink or forced air cooling on the devices shall be permitted.

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).

Measurement delay time (tMD) = 70 �s max. See table III, group E, subgroup 4 herein.