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MIL-PRF-19500-347 Semiconductor Device, Transistor, Npn, Silicon, Power Types: 2N3253, 2N3253S, 2N3444, 2N3444S, Jan, And JantxThis specification covers the detail requirements for NPN silicon power transistors. Two levels of product assurance is provided for the device type as specified in MIL-S-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/347B

TABLE I. Group A inspection - Continued.

Inspection 1/

Symbol

Unit

MIL-STD-750

Limits

Method

Conditions

Min

Max

Subgroup 2

- Continued

Base-emitter

3066

Test condition A; IC = 150 mA dc

VBE(SAT)1

1.0

V dc

saturated voltage

IB = 15 mA dc;

pulsed (see 4.5.1)

Base-emitter

3066

Test condition A; IC = 500 mA dc;

VBE(SAT)2

0.7

1.3

V dc

IB = 50 mA dc; pulsed (see 4.5.1)

saturated voltage

Base-emitter

3066

Test condition A;

VBE(SAT)3

1.8

V dc

voltage saturated

IC = 1.0 A dc; IB = 100 mA dc;

pulsed (see 4.5.1)

Subgroup 3

TA = +150�C

High-temperature

operation:

ICBO2

�A dc

3036

Collector to base

Bias condition D; VCB = 60 V dc

cutoff current

TA = -55�C

Low-temperature

operation:

hFE4

Forward-current

3076

VCE = 1.0 V dc;

transfer ratio

IC = 150 mA dc; pulsed

(see 4.5.1)

2N3253, S

2N3444, S

Subgroup 4

Pulse response:

3251

Test condition A

VCC = 30 V dc; VEB = 2 V dc;

Delay time

IC = 500 mA dc; IB1 = 50 mA dc

(see figure 2 and 3)

Rise time

VCC = 30 V dc; VEB = 2 V dc;

IC = 500 mA dc; IB1 = 50 mA dc

(see figure 2 and 3)

Storage time

VCC = 30 V dc; IB1 =

IC = 500 mA dc; IB2 = 50 mA dc

(see figure 2 and 3)

Fall time

VCC = 30 V dc; IB1 =

IC = 500 mA dc; IB2 = 50 mA dc

(see figure 2 and 3)

See footnote at end of table.