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MIL-PRF-19500-347 Semiconductor Device, Transistor, Npn, Silicon, Power Types: 2N3253, 2N3253S, 2N3444, 2N3444S, Jan, And JantxThis specification covers the detail requirements for NPN silicon power transistors. Two levels of product assurance is provided for the device type as specified in MIL-S-19500.

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MIL-PRF-19500/347B
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Unit
MIL-STD-750
Limits
Method
Conditions
Min
Max
Subgroup 4
- Continued
µA dc
Base leakage current
VCC = 60 V dc; VEB = 4 V dc;
IBL
0.5
(see 4.5.2)
Extrapolated unity
3306
VCE = 10 V dc; IC = 50 mA dc;
17
60
|hfe|
gain frequency
f = 100 MHz
Open circuit output
3236
VCB = 10 V dc; f = 1 MHz
Cobo
12
pf
capacitance
Input capacitance
3240
VEB = 0.5 V dc; f = 1 MHz
Cibo
80
pf
(see 4.5.3)
Total control charge
VCC = 30 V dc; IC = 500 mA dc;
QT
5
n
IB1 = 50 mA dc (see figure 4)
Coulombs
Subgroup 5
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
TABLE II. Groups B and C delta measurement. 1/
Step
Inspection
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
ĆhFE2
1.
Forward-current
3076
VCE = 1.0 V dc;
±25 percent change from
IC = 500 mA dc;
transfer ratio
initial recorded value.
Pulsed (see 4.5.1)
1/ The delta measurements for group B, table E-VIB (JAN, JANTX), group C table E-VII, and group E, table E-IX
subgroup 2 of MIL-PRF-19500 are step 1, subgroup 6.
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