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MIL-PRF-19500-366 Semiconductor Device, Transistor, Npn, Silicon, Amplifier, Types 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, N3500U4, 2N3501, 2N3501L, 2N3501Ub, And 2N3501U4, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Jankcb, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, ...This specification covers the performance requirements for NPN, silicon, low-power amplifier and switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/366P

4.4.4 Group D inspection. Conformance inspection for hardness assured JANS, and JANKC types shall include

the Group D tests specified in table II herein. These tests shall be performed as required in accordance with MIL-

PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose, or method 1017 of MIL-STD-750 for neutron

fluence, as applicable (see 6.2 herein), except Group D subgroup 2 may be performed separately from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to

the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the

applicable steps of 4.5.2.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Delta requirements. Delta requirements shall be as specified below: 1/ 2/ 3/

Step

Inspection 4/

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

Min

Max

Collector to base

3036

Bias condition D;

ĆICBO2

�100 percent of initial

cutoff current

value or 10 nA dc,

whichever is greater.

2N3498, 2N3499

VCB = 50 V dc

2N3500, 2N3501

VCB = 75 V dc

Forward-current

3076

VCE = 10 V dc; IC = 10 mA dc;

ĆhFE3

�25 percent change from

transfer ratio

initial reading

pulsed (see 4.5.1)

5/ 6/

Forward-current

3076

VCE = 10 V dc; IC = 150 mA dc;

ĆhFE4 5/

�25 percent change from

transfer ratio

initial reading

pulsed (see 4.5.1)

Collector to emitter

3071

IC = 10 mA dc;

ĆVCE(sat)1

�50 mV dc change from

voltage (saturated)

previous measured value

IB = 1.0 mA dc;

5/ 6/ 7/

pulsed (see 4.5.1)

1/ The delta measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 4, see 4.5.2 herein, steps 3 and 4.

b. Subgroup 5, see 4.5.2 herein, steps 1 and 2.

2/ The delta measurements for group B, (see 4.4.2.2 herein, JAN, JANTX, and JANTXV) are as follows: After

each step in 4.4.2.2, see 4.5.2 herein, steps 1 and 3.

3/ The delta measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, see 4.5.2 herein, step 1

(for JANS only).

4/ Electrical characteristics for "L", "U4", and "UB" suffix devices are identical to their corresponding "non-L",

"non-U4" and "non-UB" suffix devices unless otherwise noted.

5/ Devices which exceed the table I limits shall not be returned to the lot, but will not be considered failures.

6/ JANS only.

7/ Maximum limit for this test characterized at ≤ .125 inch (3.18 mm) from the case.