MIL-PRF-19500/366P
TABLE I. Group A inspection.
Inspection 1/ 2/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 3/
Visual and mechanical
2071
examination 4/
Solderability 4/ 5/
2026
n = 15 leads, c = 0
Resistance to solvents
1022
n = 15 devices, c = 0
4/ 5/ 6/
Temp cycling 4/ 5/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 5/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 5/
Table I, subgroup 2
Bond strength 4/ 5/
2037
Precondition
TA = +250°C at t = 24 hours or
TA = +300°C at t = 2 hours
n = 11 wires, c = 0
Decap internal visual (design
2075
n = 4 devices, c = 0
verification) 4/
Subgroup 2
Thermal impedance
3131
See 4.3.3
°C/W
ZθJX
Collector to base cutoff current
3036
Condition D,
ICBO1
2N3498, 2N3499
10
µA dc
VCB = 100 V dc
2N3500, 2N3501, 2N3501UB
10
µA dc
VCB = 150 V dc
Collector to emitter cutoff
3041
Condition D; pulsed (see 4.5.1)
ICEO
current
2N3498, 2N3499
1
µA dc
VCE = 80 V dc
2N3500, 2N3501, 2N3501UB
1
µA dc
VCE = 120 V dc
Breakdown voltage, collector to
3011
Bias condition D; IC = 10 mA dc;
V(BR)CEO
emitter
pulsed (see 4.5.1)
2N3498, 2N3499
100
V dc
2N3500, 2N3501, 2N3501UB
150
V dc
Emitter to base, cutoff current
3061
10
µA dc
Bias condition D; VEB = 6 V dc
IEBO1
Collector to base cutoff current
3036
Bias condition D;
ICBO2
2N3498, 2N3499
50
nA dc
VCB = 50 V dc
2N3500, 2N3501, 2N3501UB
50
nA dc
VCB = 75 V dc
Emitter to base cutoff current
3061
25
nA dc
Bias condition D; VEB = 4 V dc
IEBO2
See footnotes at end of table.
14
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