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MIL-PRF-19500-366 Semiconductor Device, Transistor, Npn, Silicon, Amplifier, Types 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, N3500U4, 2N3501, 2N3501L, 2N3501Ub, And 2N3501U4, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Jankcb, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, ...This specification covers the performance requirements for NPN, silicon, low-power amplifier and switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/366P
1.
Chip size ...................... .024 x .026 inch ±.002 inch (0.609 x 0.660 mm ±0.051 mm).
2.
Chip thickness ............. .010 ±.0015 inch (0.254 x 0.038 mm).
3.
Top metal..................... Aluminum 15,000 nÅ minimum, 18,000Å nominal.
4.
Back metal ................... Gold 3,500Å minimum, 5,000Å nominal.
5.
Backside ...................... Collector.
6.
Bonding pad................. B = .004 x .006 inch (0.102 x 0.152 mm).
E = .004 x .0055 inch (0.102 x 0.140 mm).
FIGURE 4. Physical dimensions, JANHCC and JANKCC die.
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