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MIL-PRF-19500-366 Semiconductor Device, Transistor, Npn, Silicon, Amplifier, Types 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, N3500U4, 2N3501, 2N3501L, 2N3501Ub, And 2N3501U4, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Jankcb, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, ...This specification covers the performance requirements for NPN, silicon, low-power amplifier and switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/366P
B
E
B - Version
1.
Die size
.030 (0.76 mm) x .030 inch (0.76 mm).
2.
Die thickness
.008 (.20 mm) ±.0016 inch (0.04 mm).
3.
Base pad
.005 inch (0.13 mm) diameter.
4.
Emitter pad
.005 inch (0.13 mm) diameter.
5.
Back metal
Gold, 6,500 ±1,950 Å.
6.
Top metal
Aluminum, 22,500 ±2,500 Å.
7.
Back side
Collector.
SiO2, 7,500 ±1,500 Å.
8.
Glassivation
FIGURE 5. Physical dimensions, JANHCB and JANKCB die.
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