MIL-PRF-19500-371 Semiconductor Device, Transistor, Npn, Silicon, High Power, Types 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, And 2N5157T3, Jan, Jantx And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/371H

TABLE II. Group E inspection (all quality levels) for qualification and re-qualification only.

MIL-STD-750

Inspection

Sample plan

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

500 cycles minimum.

Hermetic seal

1071

Fine leak

Gross leak

Electrical

See table I, subgroup 2 herein.

measurements

Subgroup 2

45 devices

c=0

Test temperature = +125�C; VCB = 80 percent of

Blocking life

1048

rated; T = 1,000 hours.

Electrical

See table I, subgroup 2 herein.

measurements

Subgroup 4

Sample size

N/A

Thermal impedance

See MIL-PRF-19500.

curves

Subgroup 5

15 devices

c=0

Barometric pressure

1001

Condition C; see 1.3.

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition A.