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MIL-PRF-19500-371 Semiconductor Device, Transistor, Npn, Silicon, High Power, Types 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, And 2N5157T3, Jan, Jantx And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/371H
Dimensions
Symbol
Inches
Millimeters
Min.  Max.
Min.
Max.
BL
.535
.545  13.59
13.84
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.510
.570  12.95
14.48
LO
.150 BSC
3.81 BSC
LS
.150 BSC
3.81 BSC
TO-254
MHD
.139
.149
3.53
3.78
MHO
.665
.685  16.89
17.40
TL
.790
.800  20.07
20.32
TT
.040
.050
1.02
1.27
TW
.535
.545  13.59
13.84
TERM 1
Base
TERM 2
Collector
TERM 3
Emitter
NOTES:
1.
Dimensions are in inches.
2.
Millimeters are given for general information only.
3.
All terminals are isolated from case.
4.
Methods used for electrical isolation of the terminals feedthroughs shall employ materials that contain a
minimum of 90 percent AL2O3 (ceramic).
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
5.
FIGURE 2. Physical dimensions, 2N3902T1, 2N5157T1 (TO-254AA).
.
4



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