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MIL-PRF-19500-371 Semiconductor Device, Transistor, Npn, Silicon, High Power, Types 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, And 2N5157T3, Jan, Jantx And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/371H
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.410
.430
10.41
10.92
CH
.190
.200
4.83
5.08
LD
.025
.035
0.64
0.89
LL
.500
.750
12.70
19.05
LO
.120 BSC
3.05 BSC
LS
.100 BSC
2.54 BSC
MHD
.140
.150
3.56
3.81
MHO
.527
.537
13.39
13.63
TL
.645
.665
16.38
16.89
TO-257
TT
.035
.045
0.89
1.14
TW
.410
.420
10.41
10.67
Term 1
Base
Term 2
Collector
Term 3
Emitter
NOTES:
1.
Dimensions are in inches.
2.
Millimeters are given for general information only.
3.
All terminals are isolated from case.
4.
Methods used for electrical isolation of the terminals feedthroughs shall employ materials that contain a
minimum of 90 percent AL2O3 (ceramic).
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
5.
FIGURE 3. Physical dimensions, 2N3902T3, 2N5157T3 (TO-257AA).
5



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