MIL-PRF-19500-394 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, And 2N5238S, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg,And JankchThis specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/394N

4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANKC types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance

with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing

provided there is no adverse effect to the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the

applicable steps of 4.5.2.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

4.5.2 Delta requirements. Delta requirements shall be as specified below:

Step

Inspection

Symbol

Limit

Method

Conditions

ĆICB02 (1)

Collector-base cutoff

3036

Bias condition D,

100 percent of initial

current

VCB = 80 V dc

value or 50 nA dc,

whichever is greater.

ĆhFE2 (1)

�20 percent change

Forward current

3076

VCE = 5 V dc;

transfer ratio

IC = 5 A dc;

from initial reading.

pulsed see 4.5.1

(1) Devices which exceed the table I limits for this test shall not be accepted.