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MIL-PRF-19500-394 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, And 2N5238S, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg,And JankchThis specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/394N
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIB, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted with MIL-PRF-19500, and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-VIA (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-
points) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.2 herein: delta requirements
only apply to subgroups B4 and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical
measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2
and shall be in accordance with table I, subgroup 2 and 4.5.2 herein.
4.4.2.1 Group B inspection (JANS), table E-VIA of MIL-PRF-19500.
Subgroup Method
Condition
VCB = 10 V dc, 2,000 cycles, adjust device current, or power, to achieve a minimum ĆTJ
B4
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of +100°C.
VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure
B5
1027
occurs, resubmission shall be at the test conditions of the original sample.)
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa,
adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a
TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic
failures during CI, (conformance inspection), shall be analyzed to the extent possible to identify root cause and
corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and
related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to
eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the
failure mode.
Step
Method
Condition
Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to
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achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time
decreased as long as the devices are stressed for a total of 45,000 device hours minimum,
and the actual time of test is at least 340 hours.
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
2
1048
n = 45 devices, c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
3
1032
8



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