MIL-PRF-19500-394 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, And 2N5238S, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg,And JankchThis specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/394N

NOTES:

1. Die size:

.155 x .155 inch (3.937 x 3.937 mm).

2. Die thickness:

.008 �.0016 inch (0.2032 �0.04064 mm).

3. Base pad:

.012 x .090 inch (0.3048 x 2.286 mm).

4. Emitter pad:

.012 x .090 inch.

5. Back metal:

Gold, 2,400 �720 �.

6. Top metal:

Aluminum, 37,500 �7,500 �.

7. Back side:

Collector.

SiO2, 7,500 �1,500 �.

8. Glassivation:

FIGURE 3. JANHC and JANKC B-version die dimensions.