MIL-PRF-19500-394 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, And 2N5238S, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg,And JankchThis specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/394N

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance, method 3131 of MIL-

Thermal impedance, method 3131 of

Not applicable

ICBO2 and hFE1

48 hours minimum

ICBO2; hFE1; ĆICB02 = 100 percent of initial

ICBO2 and hFE1

value or 50 nA dc, whichever is greater;

ĆhFE1 = �15 percent of initial value.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICB02 = 100 percent of initial value

or 50 nA dc, whichever is greater;

ĆhFE1 = �15 percent of initial value.

(1)

Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not

need to be repeated in screening requirements.

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 Vdc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence

is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for

burn-in modification approval.

4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). See table II, subgroup 4 herein.