For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-404 Semiconductor Device, Diode, Silicon, Rectifier, Module High Voltage, 1N5597, 1N5600, 1N5603, Jan, Jantx And JantxvThis specification covers the performance requirements for silicon, high voltage, rectifier modules. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


img
MIL-PRF-19500/404C
TABLE I. Discrete diode-process conditioning tests and measurements.
Inspection
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Peak transient reverse power
See 4.5.3 single cycle surge;
one-half sinusoidal wave
8.3 ms
Surge = .17 J
D-1
Surge = 1.00 J
D-2
Surge = 2.00 J
D-3
TABLE II. Discrete diodes-inspection test to verify sampling plan.
Inspection
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
100 percent test
Subgroup 1
See 4.5.6
Avalanche (bulk-
breakdown
characteristics)
Subgroup 2
Forward voltage
4011
VF2
D-1
1.1
V dc
IF = 1.0 A dc
D-2
1.0
V dc
IF = 2.0 A dc
D-3
1.0
V dc
IF = 5.0 A dc
Reverse current
4016
DC method
IR1
µA dc
1
1N5597
VR = 600 V dc
µA dc
5
1N5600
VR = 600 V dc
µA dc
5
1N5603
VR = 600 V dc
IR = 10 µA dc
Breakdown voltage
4021
660
V dc
V(BR)
IR = 50 µA dc
Breakdown voltage
4021
1,000
V dc
V(BR)
Subgroup 3
µs
Reverse recover time
See figure 2 and 4.5.2
2
trr
Dc method; TA = 100°C,
4016
Reverse current
IR2
VR = 600 V dc
µA dc
75
D-1
µA dc
100
D-2
µA dc
100
D-3
8



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.