INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/407E
shall be completed by 19 September 2007.
19 June 2007
SUPERSEDING
MIL-PRF-19500/407D
20 January 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPE 2N3055, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power, transistor. Three
levels of product assurance is provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
PT
TA = +25°C
TC = +25°C
VCBO
VCEO
VEBO
IC
IB
TSTG and TJ
RθJC
(1) (2)
(3)
(4)
°C/W
°C
W
W
V dc
V dc
V dc
A dc
A dc
-65°C to +200°C
2N3055
6
117
100
70
7
15
7
1.5
(1)
TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750.
Derate linearly 34.2 mW/°C for TA > +25°C.
(2)
(3)
See figure 2 for temperature-power derating curves.
(4)
See figure 3 for transient thermal impedance graph.
1.4 Primary electrical characteristics.
⏐hfe⏐
hFE2
Cobo
VCE(sat)
Pulse response
IC = 1 A dc
IE = 0, VCB = 10 V dc
IC = 4 A dc
IC = 4 A dc
100 kHz ≤ f ≤ 1 MHz
VCE = 4 V dc
IB = 0.4 A dc
VCE = 4 V dc
ton
toff
f = 100 kHz
(1)
(1)
µs
µs
pF
V dc
Min
20
8
Max
700
0.75
60
40
6
12
(1) Pulsed (see 4.5.1).
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil .
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