MIL-PRF-19500-407 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N3055, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, power, transistor. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/407E

TABLE II. Groups A, B, C, and E delta measurements. 1/ 2/ 3/

Step

Inspection

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

�100 percent of initial value or

ĆICEX1

Bias condition A,

3041

Collector to emitter

100 �A dc, which ever is greater

VBE = -1.5 V dc,

cutoff current

VCE = 100 V dc

ĆhFE2

�25 percent change in initial recorded

3076

Forward-current

VCE = 4 V dc, IC = 4 A dc,

transfer ratio

pulsed (see 4.5.1)

value

1/ The delta measurements for table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are: Subgroups 3

and 6, see table II herein, steps 1 and 2.

2/ The delta measurements for table E-VII of MIL-PRF-19500 are: Subgroup 6, see table II herein, steps 1 and 2.

3/ The delta measurements for table E-IX of MIL-PRF-19500 are: Subgroups 1 and 2, see table II herein, all

steps.