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MIL-PRF-19500-413 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N3771 And 2N3772, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/413F

* TABLE I. Group A inspection - Continued.

Unit

Symbol

Inspection 1/

MIL-STD-750

Limits

Min

Max

Method

Conditions

Subgroup 5 - Continued

RBB1 = 2Ω, VBB1 ≤ 10 V dc,

Test 2

RBB2 = 100Ω, VBB2 = 1.5 V dc,

(2N3772 only)

IC = 20 A dc, VCC = 40 �5 V dc,

RL ≤ 2Ω, L = 5 mH,

0.01Ω (Signal Transformer

Co. CH-30 or equivalent),

CR = 1N1186A, clamp

voltage = 90 +0, -5 V dc,

(device fails if clamp

voltage not reached)

Electrical measurements

See table I, subgroup 2

Subgroup 6

Safe operating area

3053

Load condition C

(unclamped inductive)

(unclamped inductive load)

see figure 5 herein;

TC = +25�C; duty cycle < 10%;

RS = 0.1Ω; RBB2 = 100Ω;

VCC < 15 V dc.

VBB2 = 1.5 V dc;

Test 1 (2N3771 only)

RBB1 = 1Ω, VBB1 < 12 V dc,

IC = 30 A dc, L = 1 mH,

0.005Ω (Signal Transformer

Co. CH-100 or equivalent),

tp ≈ 5 ms.

Test 2 (2N3772 only)

VBB2 = 1.5 V dc,

RBB1 = 2Ω, VBB1 < 12 V dc,

IC = 20 A dc, L = 2 mH,

0.01Ω (Signal Transformer

Co. CH-50 or equivalent),

tp ≈ 5 ms.

Test 3 (both types)

VBB2 = 0 V,

RBB1 < 30Ω, VBB1 < 10 V dc,

IC = 5.5 A dc, L = 40 mH,

0.3Ω (Signal Transformer

Co. CH-8 or equivalent),

tp ≈ 20 ms.

See footnotes at end of table.