MIL-PRF-19500-413 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N3771 And 2N3772, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/413F

* TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

MIL-STD-750

Sample

plan

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

1,000 cycles

Hermetic seal

1071

Fine leak

Test conditions G or H

Gross leak

Test conditions C or D

Electrical measurements

Table I, subgroup 2 and table II herein.

Subgroup 2

45 devices

c=0

Blocking life

1048

1,000 hours minimum, TA = +150�C, VCB = 80

percent of rated.

Electrical measurements

Table I, subgroup 2 and table II herein.

Subgroup 4

Sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 8

22 devices

c=0

Reverse stability

1033

Condition B