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MIL-PRF-19500-413 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N3771 And 2N3772, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/413F
NOTES:
The rise time (tr) and fall time (tf) of the applied pulse shall be each ≤ 20 nanoseconds, duty cycle ≤ 2 percent,
1.
generator source impedance shall be 50Ω, pulse width = 20 μs.
Output sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 50 pF, rise time ≤ 2.0 nanoseconds.
2.
FIGURE 2. Pulse response test circuit.
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