MIL-PRF-19500-420 Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And JankceThis specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds \(category 1\) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/420M

* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Electrical measurements (end-points) requirements shall be in accordance with table I, subgroup 2 herein. Delta

measurements shall be as specified in table III herein.

4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall

be at the test conditions of the original sample.

Subgroup

Method

Condition

4066

IFSM = rated IFSM (see col. 6 of 1.3.2); ten surges of 8.3 ms each at 1 minute

intervals, superimposed on IO = 2A, VRWM = Rated. TA=+55�C max.

1037

IO = 2.4 A minimum.

VR = rated VRWM (see col. 2 of 1.3.2); 2,000 cycles. TA = 55�C max

1027

IO = 3 A minimum (see col. 4 of 1.3.2), apply VR = rated VRWM (see col. 2 of 1.3.2,

4.5.2, and 4.5.2.1) adjust IO to achieve TJ minimum; f = 50-60 Hz.

TA = + 55�C max. TJ = 175�C minimum; t = 1,000 hours. n = 45, c = 0. For

irradiated devices, include trr as an end-point measurement.

Peak reverse power PRM ≥ 636 W for square wave in accordance with test

4065

method 4065 of MIL-STD-750 (PRM ≥ 1,000 W for half-sine wave). Test shall be

performed on each sublot; sampling plan. n = 10, c = 0, electrical end-points,

see table I, subgroup 2 herein.

4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX and JANTXV of MIL-PRF-19500).

Subgroup

Method

Condition

1027

IO = 3 A minimum, adjust IO or TA to achieve the required TJ apply VR = rated

VRWM (see col. 2 of 1.3), TA =+55�C max. f = 50-60 Hz (see 4.5.2 and 4.5.2.1).

TJ = 150�C minimum. For irradiated devices, include trr as an end-point

measurement.