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MIL-PRF-19500-420 Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And JankceThis specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds \(category 1\) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/420M

* TABLE I. Group A inspection.

Inspection 1/

Symbol

Limits

Unit

MIL-STD-750

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

inspection

Subgroup 2

�C/W

See 4.3.1

ZθJX

Thermal impedance 2/

3101

IF = 9.0 A; duty cycle ≤ 2

VF1

Forward voltage

4011

percent (pulsed see 4.5.1);

tp ≤ 8.3 ms

1N5550, 1N5550US

0.6

1.2

1N5551, 1N5551US

0.6

1.2

1N5552, 1N5552US

0.6

1.2

1N5553, 1N5553US

0.6

1.3

1N5554, 1N5554US

0.6

1.3

IF = 1.5 A

VF2

Forward voltage

4011

0.5

1.0

DC method or equivalent pulse

IR1

Reverse current

4016

leakage

�A

VR = 200 V

1N5550, 1N5550US

1.0

�A

VR = 400 V

1N5551, 1N5551US

1.0

�A

VR = 600 V

1N5552, 1N5552US

1.0

�A

VR = 800 V

1N5553, 1N5553US

1.0

�A

1N5554, 1N5554US

1.0

VR = 1,000 V

VBR1

Breakdown voltage

4021

(diodes)

IR = 50 �A

1N5550, 1N5550US

220

IR = 50 �A

1N5551, 1N5551US

440

IR = 50 �A

1N5552, 1N5552US

660

IR = 50 �A

1N5553, 1N5553US

880

IR = 50 �A

1N5554, 1N5554US

1,100

See footnote at end of table.