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MIL-PRF-19500-420 Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And JankceThis specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds \(category 1\) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/420M
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.081
.087
2.05
2.20
B
.055
.061
1.40
1.55
C
.007
.012
0.18
0.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics are
Top (anode) Al Thickness = 60,000Å minimum.
Back (cathode) Al/Ti/Ni/Ag Thickness = 2,500Å minimum,
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 7. JANHCE and JANKCE (E-version) die dimensions.
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