MIL-PRF-19500-420 Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And JankceThis specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds \(category 1\) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/420M

Dimensions

Ltr

Notes

Inches

Millimeters

Min

Max

Min

Max

.115

.180

2.92

4.57

3, 4

.130

.300

3.30

7.62

.036

.042

0.92

1.07

.900

1.300

22.86

33.02

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for general information only.

3. The BL dimension shall include the entire body including slugs and sections of the lead over

which the diameter is uncontrolled. This uncontrolled area is defined as the zone between

the edge of the diode body and extending .050 inch (1.27 mm) onto the leads.

4. Dimension BD shall be measured at the largest diameter.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions of diode 1N5550 through 1N5554,